Pseudomorphic InGaAs base ballistic hot‐electron device
نویسندگان
چکیده
منابع مشابه
The simulation of high-performance InGaP/InGaAs/GaAs pseudomorphic HEMT
Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1988
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.100331